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The paper discusses the anomalous transport features observed in boron-doped diamond, including the re-entrant Bosonic Insulating peak and zero bias conductance anomalies, which are significant for developing next-generation quantum technologies. It highlights the potential of superconducting diamond as a platform for novel device functionality, particularly in low-dimensional elements like superconducting resonators and phase slip qubits. The authors also detail fabrication techniques, emphasizing the use

Author
Somnath Bhattacharyya
Language
EN

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