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About this Engineering article
Gate inversion effect in Si1−xGex∕HfO2∕Si metal-oxide-semiconductor devices by Costa e Silva, J.; de Oliveira, E. L.; de Sousa, J. S.; Freire, J. A. K.; Freire, V. N.; Farias, G. A. is a Engineering article available to read on EtoBox.
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- Author
- Costa e Silva, J.; de Oliveira, E. L.; de Sousa, J. S.; Freire, J. A. K.; Freire, V. N.; Farias, G. A.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2005
- Field
- Engineering (Physical Sciences)