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About this Engineering article
Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition by Narayanan, V.; Lorenz, K.; Kim, Wook; Mahajan, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Narayanan, V.; Lorenz, K.; Kim, Wook; Mahajan, S.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)
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