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This document presents a bipolar field-effect tunneling transistor utilizing vertical graphene heterostructures with boron nitride as a tunnel barrier, achieving room temperature switching ratios of approximately 50. The device architecture leverages the low density of states in graphene to enhance tunneling characteristics, which could lead to improved performance in high-frequency applications and large-scale integration. The study also discusses the potential for achieving higher ON-OFF ratios through op

Author

masterrobert7890

Language

EN