About this scholarly article

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction by Schulze, Jorg; Blech, Andreas; Fischer, Inga A.; Hahnel, Daniel; Naasz, Sandra; Tropper, Eva-Maria is a scholarly article available to read on EtoBox.

Author

Schulze, Jorg; Blech, Andreas; Fischer, Inga A.; Hahnel, Daniel; Naasz, Sandra; Tropper, Eva-Maria

Publisher

IEEE

Published

2014