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Temperature-dependent dynamic triggering characteristics of SCR-type ESD protection circuits by Sheng-Lyang Jang; Lien-Sheng Lin; Shao-Hua Li is a Engineering article available to read on EtoBox.

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Experimental analysis of the dynamic characteristics of various silicon-controlled recti®er (SCR)-type ESD protection circuits at various temperatures has been carried out. These circuits include MOSFET-trigger SCR (MTSCR), diode-chain-trigger SCR (DCTSCR), low-voltage zener diode trigger SCR (ZDSCR), low-voltage trigger SCR (LVTSCR) and gate-coupled low-voltage trigger SCR (GCSCR) circuits. The static trigger voltage increases with temperature if the SCR uses the breakdown trigger mechanism, otherwise it decreases with temperature. The peak pad voltages for the MTSCR and DCTSCR subjected to a pulse-like ESD stress decrease with increasing temperature, while those of GCSCR and LVTSCR are relatively insensitive to temperature.

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Author

Sheng-Lyang Jang; Lien-Sheng Lin; Shao-Hua Li

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2001

Language

EN

Field

Engineering (Physical Sciences)