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International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime by Momose, H.S.; Kimijima, H.; Ishizuka, S.; Miyahara, Y.; Ohguro, T.; Yoshitomi, T.; Morifuji, E.; Nakamura, S.; Morimoto, T.; Katsumata, Y.; Iwai, H. is a scholarly article available to read on EtoBox.

Author
Momose, H.S.; Kimijima, H.; Ishizuka, S.; Miyahara, Y.; Ohguro, T.; Yoshitomi, T.; Morifuji, E.; Nakamura, S.; Morimoto, T.; Katsumata, Y.; Iwai, H.
Publisher
IEEE
Published
1998
Language
EN

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