About this document
Low-Noise Amplifier Design by efremofe7394 is a document available to read on EtoBox.
The document discusses noise models for microwave transistors. It describes how field-effect transistors (FETs) generally have higher low-frequency noise than bipolar junction transistors (BJTs) due to larger 1/f noise. High electron mobility transistors (HEMTs) typically have better noise performance and gain-noise tradeoff than metal-semiconductor field-effect transistors (MESFETs). Compact noise models are presented that relate intrinsic FET noise to small-signal parameters.
- Author
- efremofe7394
- Language
- EN