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Positron annihilation study of HVPE grown thick GaN layers by M. Misheva; H. Larsson; D. Gogova; B. Monemar is a Materials Science article available to read on EtoBox.

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## Abstract Single‐crystalline GaN layers with a thickness up to 330 μm were grown by hydride vapor phase epitaxy on basal plane sapphire at gallium stable conditions in a bottom‐fed vertical reactor at atmospheric pressure. Positron annihilation spectroscopy experiments were implemented in order to identify native point defects in the as‐grown non‐intentionally doped n‐type GaN. Comparatively low concentrations of Ga vacancy related defects in the order of 10^16^ to 10^17^ cm^–3^ were extracted from the positron annihilation spectroscopy data. The Ga vacancy defect concentration was related to the intensity of the yellow photoluminescence band centered at 2.2 eV. The influence of the growth rate on the Ga vacancy related defect concentration was investigated. A trend of decreasing of the defect concentration with increasing of layer thickness is observed, which correlates with improving crystalline quality with the thickness. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

M. Misheva; H. Larsson; D. Gogova; B. Monemar

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2005

Language

EN

Field

Materials Science (Physical Sciences)