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About this Engineering article
Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling by Sometani, Mitsuru; Katsu, Yoshihito; Nagai, Daisuke; Tsuji, Hidenori; Hosoi, Takuji; Shimura, Takayoshi; Yonezawa, Yoshiyuki; Watanabe, Heiji is a Engineering article available to read on EtoBox.
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- Author
- Sometani, Mitsuru; Katsu, Yoshihito; Nagai, Daisuke; Tsuji, Hidenori; Hosoi, Takuji; Shimura, Takayoshi; Yonezawa, Yoshiyuki; Watanabe, Heiji
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2018
- Language
- EN
- Field
- Engineering (Physical Sciences)