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About this Engineering article
Plasma diagnostic study of silicon nitride film growth in a remote Ar–H2–N2–SiH4 plasma: Role of N and SiHn radicals by Kessels, W. M. M.; van Assche, F. J. H.; Hong, J.; Schram, D. C.; van de Sanden, M. C. M. is a Engineering article available to read on EtoBox.
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- Author
- Kessels, W. M. M.; van Assche, F. J. H.; Hong, J.; Schram, D. C.; van de Sanden, M. C. M.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 2004
- Field
- Engineering (Physical Sciences)