About this scholarly article

2020 IEEE International Reliability Physics Symposium (IRPS) - Trap Dynamics Model Explaining the R ON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs by Zagni, Nicolo; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni is a scholarly article available to read on EtoBox.

Author

Zagni, Nicolo; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni

Publisher

IEEE

Published

2020