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Can I read Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation on EtoBox?
Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation by Wojciech Jung; Irina V. Antonova; Andrzej Misiuk is a Engineering article available to read on EtoBox.
What is Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation about?
Thermal donors formation in silicon implanted with H 2 + or He + ions or co-implanted with both kinds of ions and annealed at 720 K under atmospheric and enhanced pressure was studied. Interaction between defects from different implanted layers was also analysed. Local strain in implanted layers was found to determine the process of defect and impurity redistribution.
Who reads Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wojciech Jung; Irina V. Antonova; Andrzej Misiuk
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)
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