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About this Engineering article
Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance by Jung, Helmut; Abele, Peter; Grünenpütt, Jan; Hosch, Michael; Schauwecker, Bernd; Blanck, Hervé; Rödle, Thomas; Schäfer, Michael is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Jung, Helmut; Abele, Peter; Grünenpütt, Jan; Hosch, Michael; Schauwecker, Bernd; Blanck, Hervé; Rödle, Thomas; Schäfer, Michael
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2014
- Field
- Engineering (Physical Sciences)