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Characterization of Cu(In,Ga) (S,Se)~2~ thin films prepared by sequential evaporation from ternary compounds by T. Yamaguchi; M. Hatori; S. Niiyama; Y. Miyake is a Materials Science article available to read on EtoBox.

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## Abstract Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGaSe~2~] + [CuInSe~2~]) mole ratio in the evaporating materials increased, the S/(S + Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se)~2~ structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga) (S,Se)~2~ thin films had large and columnar grains. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Characterization of Cu(In,Ga) (S,Se)~2~ thin films prepared by sequential evaporation from ternary compounds?

Author

T. Yamaguchi; M. Hatori; S. Niiyama; Y. Miyake

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2006

Language

EN

Field

Materials Science (Physical Sciences)