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Evaluation of nanopipes in MOCVD grown (0 0 0 1) GaN/Al2O3 by wet chemical etching by S.K Hong; B.J Kim; H.S Park; Y Park; S.Y Yoon; T.I Kim is a Engineering article available to read on EtoBox.

What is Evaluation of nanopipes in MOCVD grown (0 0 0 1) GaN/Al2O3 by wet chemical etching about?

Nanopipes in GaN, grown by MOCVD on c-plane (0 0 0 1) sapphire, were investigated by generating etch-pits. Well-defined etch-pits were found to form on the surface of GaN films, with aqueous solutions of H PO (85 mol%). Using optical microscopy, SEM, and TEM, the relationship between etch-pits and crystalline defects in GaN films was investigated. It was found that in GaN films etch-pits formed at the nanopipes and not at the threading dislocations. Therefore, wet chemical etching proves to be a simple and accurate method for determining the density and distribution of nanopipes in GaN films.

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Author

S.K Hong; B.J Kim; H.S Park; Y Park; S.Y Yoon; T.I Kim

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)