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About this Engineering article
Electronic Defects in Silicon after Transient Isothermal Annealing by Pensl, G.; Schulz, M.; Stolz, P.; Johnson, N.M.; Gibbons, J.F.; Hoyt, J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Pensl, G.; Schulz, M.; Stolz, P.; Johnson, N.M.; Gibbons, J.F.; Hoyt, J.
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP) (ISSN 0272-9172)
- Published
- 1983
- Language
- EN
- Field
- Engineering (Physical Sciences)
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