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P-N Diode Voltage-Current-Temperature Study by henriqueltorres is a document available to read on EtoBox.
This document summarizes an experiment that characterized the voltage, current, and temperature behavior of a common silicon PN diode (1N4148) under forward bias conditions. The experiment varied the temperature of an ice water bath from 3°C to 95°C while measuring the voltage across the diode for constant currents of 100μA, 400μA, 800μA, and 1500μA. The results were analyzed to obtain relationships between voltage, temperature, and current. Specifically, the experiment aimed to show that the coefficient of
- Author
- henriqueltorres
- Language
- EN