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About this Physics and Astronomy article
Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies by Krajewski, Tomasz A.; Stallinga, Peter; Zielony, Eunika; Goscinski, Krzysztof; Kruszewski, Piotr; Wachnicki, Lukasz; Aschenbrenner, Timo; Hommel, Detlef; Guziewicz, Elzbieta; Godlewski, Marek is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Krajewski, Tomasz A.; Stallinga, Peter; Zielony, Eunika; Goscinski, Krzysztof; Kruszewski, Piotr; Wachnicki, Lukasz; Aschenbrenner, Timo; Hommel, Detlef; Guziewicz, Elzbieta; Godlewski, Marek
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2013
- Field
- Physics and Astronomy (Physical Sciences)