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What is 2SD1199 NPN Transistor Specifications about?

This document summarizes the specifications and characteristics of the 2SD1199 silicon NPN epitaxial planar transistor. It is intended for use in low-frequency amplification. Key features include a high forward current transfer ratio, low collector-emitter saturation voltage, high emitter-base voltage, and low noise voltage. It has an M-type package for easy manual or automatic insertion onto printed circuit boards. Electrical characteristics include a minimum hFE of 400, maximum VCE(sat) of 0.2V, and trans

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Stuxnet

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EN