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This review discusses the impact of thermal boundary resistance (TBR) on the thermal management of gallium-nitride (GaN)-based semiconductor devices, highlighting the advantages of GaN over traditional silicon semiconductors. It emphasizes the significance of TBR in limiting heat dissipation and performance in high-power applications, particularly in GaN-on-SiC and GaN-on-diamond structures. The document also summarizes experimental and simulation studies on TBR, providing guidelines for optimizing thermal

Author

Ghulam Abbas Khan

Language

EN