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What is AP4800AGM MOSFET Datasheet about?

This document provides specifications for an N-channel enhancement mode power MOSFET from Advanced Power Electronics Corp. The MOSFET has a maximum drain-source voltage of 30V, on-resistance of 18mΩ, continuous drain current of 9.6A, and comes in an SO-8 package. It is designed for low voltage applications like DC/DC converters by providing fast switching speeds, low resistance, and cost effectiveness. Electrical characteristics, thermal properties, and package details are provided.

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aluiznet

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EN