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STEM nanoanalysis of Au/Pt/Ti-Si~3~N~4~ interfacial defects and reactions during local stress of SiGe HBTs by Ali Alaeddine; Cécile Genevois; Laurence Chevalier; Kaouther Daoud is a Materials Science article available to read on EtoBox.

What is STEM nanoanalysis of Au/Pt/Ti-Si~3~N~4~ interfacial defects and reactions during local stress of SiGe HBTs about?

A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. It is demonstrated that the presence of initial defects introduced during technological processes play a major role in the acceleration of degradation mechanisms of the structure during stress. A combination of energy-filtered transmission electron microscopy analysis with high angle annular dark field STEM and energy dispersive spectroscopy provides strong evidence that migration of Au-Pt from the metal contacts to Ti/Si~3~N~4~ interface is one of the precursors to species interdiffusion and reactions. High current densities and related local heating effects induce the evolution of the pure Ti initial layer into mixture layer composed of Ti, O, and N. Local contamination of Ti layers by fluorine atoms is also pointed out, as well as rupture of TiN thin barrier layer.

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Author

Ali Alaeddine; Cécile Genevois; Laurence Chevalier; Kaouther Daoud

Publisher

Springer-Verlag; Springer (Biomed Central Ltd.); Springer Verlag; Seacaucus NJ: Springer Verlag New York, 2006-; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 1931-7573)

Published

2011

Language

EN

Field

Materials Science (Physical Sciences)