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About this Engineering article
Materials and Device Characteristics of InAlAs/InGaAs HEMTs by Ho, Pin; Kao, M. Y.; Chao, P. C.; Duh, K. H. G.; Smith, P. M.; Martin, P. A.; Liu, S. M. J.; Hwang, K. C.; Ballingall, J. M.; Yu, T.; Swanson, A. W. is a Engineering article available to read on EtoBox.
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- Author
- Ho, Pin; Kao, M. Y.; Chao, P. C.; Duh, K. H. G.; Smith, P. M.; Martin, P. A.; Liu, S. M. J.; Hwang, K. C.; Ballingall, J. M.; Yu, T.; Swanson, A. W.
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP) (ISSN 0272-9172)
- Published
- 1992
- Field
- Engineering (Physical Sciences)