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Can I read Nanoscale FinFETs for low power applications on EtoBox?
Nanoscale FinFETs for low power applications by W. Rösner; E. Landgraf; J. Kretz; L. Dreeskornfeld; H. Schäfer; M. Städele; T. Schulz; F. Hofmann; R.J. Luyken; M. Specht; J. Hartwich; W. Pamler; L. Risch is a Engineering article available to read on EtoBox.
What is Nanoscale FinFETs for low power applications about?
N and p channel FinFETs with fin widths in the range of 15-30 nm and gate lengths down to 20 nm have been processed using e-beam-lithography and nano-etching. The I On -I Off characteristics of n-channel FinFET devices with (1 0 0) and (1 1 0) sidewall orientation made on the same wafer are compared. Low off currents down to 1 pA/lm and high on-currents were observed and we demonstrate that FinFETs are more suitable than bulk transistors to achieve the requirements for low power applications.
Who reads Nanoscale FinFETs for low power applications?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- W. Rösner; E. Landgraf; J. Kretz; L. Dreeskornfeld; H. Schäfer; M. Städele; T. Schulz; F. Hofmann; R.J. Luyken; M. Specht; J. Hartwich; W. Pamler; L. Risch
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2004
- Language
- EN
- Field
- Engineering (Physical Sciences)