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About this Engineering article
Interfacial Hardness Enhancement in Deuterium Annealed 0.25 μM Channel Metal Oxide Semiconductor Transistors by Devine, R. A. B.; Autran, J.-L.; Warren, W. L.; Vanheusdan, K. L.; Rostaing, J.-C. is a Engineering article available to read on EtoBox.
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- Author
- Devine, R. A. B.; Autran, J.-L.; Warren, W. L.; Vanheusdan, K. L.; Rostaing, J.-C.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1997
- Language
- EN
- Field
- Engineering (Physical Sciences)