Opening book details…
About this Engineering article
Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile by Singh, Kunal; Kumar, Mirgender; Goel, Ekta; Singh, Balraj; Dubey, Sarvesh; Kumar, Sanjay; Jit, Satyabrata is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Singh, Kunal; Kumar, Mirgender; Goel, Ekta; Singh, Balraj; Dubey, Sarvesh; Kumar, Sanjay; Jit, Satyabrata
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 2016
- Language
- EN
- Field
- Engineering (Physical Sciences)