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Role of Defects in Ultrafast Charge Recombination in Monolayer <Mml:math Xmlns:mml=" by Raquel Esteban-Puyuelo; Biplab Sanyal is a Physics and Astronomy article available to read on EtoBox.

What is Role of Defects in Ultrafast Charge Recombination in Monolayer <Mml:math Xmlns:mml=" about?

In this paper, we have systematically studied the role of point defects in the recombination time of monolayer MoS 2 using time-dependent ab initio nonadiabatic molecular dynamics simulations. Various types of point defects, such as S vacancy, S interstitial, Mo vacancy, and Mo interstitial have been considered. We show that defects strongly accelerate the electron-hole recombination, especially interstitial S atoms do that by three orders of magnitude higher compared to pristine MoS 2 . Mo defects (both vacancy and interstitial) introduce a multitude of de-excitation pathways via various defect levels in the energy gap. The results of this study provide some fundamental understanding of photoinduced de-excitation dynamics in presence of defects in highly technologically relevant 2D MoS 2 .

Who reads Role of Defects in Ultrafast Charge Recombination in Monolayer <Mml:math Xmlns:mml="?

It is typically read by researchers, students, and practitioners in Physics and Astronomy.

Author
Raquel Esteban-Puyuelo; Biplab Sanyal
Publisher
American Physical Society (APS)
Published
2021
Language
EN
Field
Physics and Astronomy (Physical Sciences)

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