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About this Engineering article
Sub-half micrometer gate lift-off by three layer resist process via electron beam lithography for gallium arsenide monolithic microwave integrated circuits (MIMICs) : R M NAGARAJAN, S D RASK, M R KING, T K YARD (Gallium Arsenide Components Group, Unisys Corp., Eagan, MN, USA) Proc. SPIE — Int. Soc. Opt. Eng. (USA), vol. 923, pp. 194–200 (1988). (Electron-Beam, X-Ray, and Ion-Beam Technology:… is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0026-2692)
- Published
- 1989
- Language
- EN
- Field
- Engineering (Physical Sciences)