Can I read Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors on EtoBox?

Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors by Siva Kotamraju; Bharat Krishnan; Galyna Melnychuk; Yaroslav Koshka is a Engineering article available to read on EtoBox.

What is Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors about?

In prior research, a possibility to increase the growth rate of the low-temperature epitaxial growth of 4H-SiC was explored by supplementing chloro-carbon precursor CH 3 Cl with HCl as an additional source of chlorine. In the current work, SiCl 4 was investigated as a replacement for SiH 4 + HCl. The homogeneous nucleation in the gas phase was further reduced compared to SiH 4 +HCl growth, thus essentially eliminating the main bottleneck for increasing the growth rate (R g ). However, for low values of the carrier gas flow, premature dissociation of Si gas-phase clusters was found to cause R g nonhomogeneity and triangular defect formation. The drastically suppressed homogeneous nucleation opened the window for increasing the carrier gas flow velocity in order to improve the R g homogeneity from upstream to downstream. Nevertheless, generation of triangular defects was significant at R g above 5-6 mm/h. The process window for obtaining good epilayer morphology was found to correspond to Si supply-limited mode. The window was restricted at low values of C/Si ratio by formation of Si-rich islands/droplet and at high C/Si ratio by formation of polycrystalline SiC. The process window b

Who reads Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors?

Author

Siva Kotamraju; Bharat Krishnan; Galyna Melnychuk; Yaroslav Koshka

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)