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Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers by Ray-Hua Horng; Yun-Sheng Li; Kun-Lin Lin; Fu-Gow Tarntair; Siri Nittayakasetwat; Ching-Lien Hsiao is a Materials Science article available to read on EtoBox.

What is Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers about?

ZnGa2O4 epilayers have been grown on sapphire using the metalorganic chemical vapor deposition system. However, there is a trade-off between high conductivity and large defect density (oxygen vacancies) with the growth time of the growth of ZnGa2O4 epilayers. The ultraviolet (UV)-ozone treatment on the ZnGa2O4 epilayer at 100 ° C was proposed to reduce the number of oxygen vacancies in ZnGa2O4. The effect of UV-ozone treatment on the performance of ZnGa2O4 metal-semiconductor-metal (MSM) photodetector (PD) was evaluated. X-ray photoelectron spectroscopy analysis showed a decrease in the number of oxygen vacancies after UV-ozone treatment of ZnGa2O4. The measured lattice parameter near the surface around 10 nm of untreated ZnGa2O4 was 8.3434 ± 0.0120 A ̇ and increased slightly to 8.3775 ± 0.0083 A ̇ after UV-ozone treatment due to the decrease in oxygen vacancies. The dark current (at 5 V) of ZnGa2O4 PD was significantly reduced from 251 to 20.2 pA before and after UV-ozone treatment; it resulted in a substantial one-order enhancement in the on/off ratio of the PDs from 2.7 × 105 and 2.15 × 106 after the UV-ozone treatment. Furthermore, the rejection ratio also improved between 24

Who reads Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers?

It is typically read by researchers, students, and practitioners in Materials Science.

Author
Ray-Hua Horng; Yun-Sheng Li; Kun-Lin Lin; Fu-Gow Tarntair; Siri Nittayakasetwat; Ching-Lien Hsiao
Publisher
Elsevier BV
Published
2022
Language
EN
Field
Materials Science (Physical Sciences)

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