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MoS2 Memristor by sushovondas770 is a document available to read on EtoBox.
This research article presents the integration of nanoscale MoS2 memristors into CMOS microchips, achieving an active area of approximately 0.015 µm2. The memristors demonstrated forming-free, nonvolatile resistive switching with ultra-low operating voltages and high reproducibility across multiple cycles. This work marks a significant advancement in incorporating 2D materials into semiconductor technology for future applications in memory and neuromorphic computing.
- Author
- sushovondas770
- Language
- EN