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This document summarizes the design considerations of InGaAs/InP single-photon avalanche diodes (SPADs) for photon-counting communication applications. It first analyzes the canonical structure and operation principle of SPADs, including their separated absorption, grading, charge, and multiplication regions. It then builds an integrated SPAD model combining photon detection efficiency and dark count rate based on basic SPAD parameters like excess bias, operating temperature, absorption and multiplication r

Author
KFSw
Language
EN