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2D-BN Interface Enhances WSe2 Mobility by Shantanu Saha is a document available to read on EtoBox.
What is 2D-BN Interface Enhances WSe2 Mobility about?
The article discusses the development of a conformal hexagonal-boron nitride (2D-BN) dielectric interface for tungsten diselenide (WSe2) devices, which enhances mobility and thermal dissipation. Using near-equilibrium plasma-enhanced chemical vapor deposition (ne-PECVD), the researchers achieved catalyst-free growth of 2D-BN on various substrates at low temperatures, resulting in improved WSe2 field-effect transistor performance with mobilities between 56-121 cm² V⁻¹ s⁻¹ and high thermal conductivity. This
- Author
- Shantanu Saha
- Language
- EN