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About this Physics and Astronomy article

Thickness-dependent strain relaxation in Si0.8Ge0.2Si(001) epitaxial films studied by spectroscopic ellipsometry by Jae Ho Bahng; Kwang Joo Kim; S.H. Ihm; J.Y. Kim is a Physics and Astronomy article available to read on EtoBox.

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Author
Jae Ho Bahng; Kwang Joo Kim; S.H. Ihm; J.Y. Kim
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)
Published
1998
Language
EN
Field
Physics and Astronomy (Physical Sciences)

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