Can I read Understanding Latency Variation in Modern DRAM Chips: Experimental Characterization, Analysis, and Optimization on EtoBox?

Understanding Latency Variation in Modern DRAM Chips: Experimental Characterization, Analysis, and Optimization by Kevin K. Chang; Abhijith Kashyap; Hasan Hassan; Saugata Ghose; Kevin Hsieh; Donghyuk Lee; Tianshi Li; Gennady Pekhimenko; Samira Khan; Onur Mutlu is a Computer Science article available to read on EtoBox.

What is Understanding Latency Variation in Modern DRAM Chips: Experimental Characterization, Analysis, and Optimization about?

Long DRAM latency is a critical performance bottleneck in current systems. DRAM access latency is defined by three fundamental operations that take place within the DRAM cell array: (i) activation of a memory row, which opens the row to perform accesses; (ii) precharge, which prepares the cell array for the next memory access; and (iii) restoration of the row, which restores the values of cells in the row that were destroyed due to activation. There is significant latency variation for each of these operations across the cells of a single DRAM chip due to irregularity in the manufacturing process. As a result, some cells are inherently faster to access, while others are inherently slower. Unfortunately, existing systems do not exploit this variation. The goal of this work is to (i) experimentally characterize and understand the latency variation across cells within a DRAM chip for these three fundamental DRAM operations, and (ii) develop new mechanisms that exploit our understanding of the latency variation to reliably improve performance. To this end, we comprehensively characterize 240 DRAM chips from three major vendors, and make several new observations about latency variation

Who reads Understanding Latency Variation in Modern DRAM Chips: Experimental Characterization, Analysis, and Optimization?

Author

Kevin K. Chang; Abhijith Kashyap; Hasan Hassan; Saugata Ghose; Kevin Hsieh; Donghyuk Lee; Tianshi Li; Gennady Pekhimenko; Samira Khan; Onur Mutlu

Publisher

ACM

Published

2016

Language

EN

Field

Computer Science (Physical Sciences)