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Skyrmion Lattice in a Doped Semiconductor by Münzer, W.; Neubauer, A.; Mühlbauer, S.; Franz, C.; Adams, T.; Jonietz, F.; Georgii, R.; Böni, P.; Pedersen, B.; Schmidt, M.; Rosch, A.; Pfleiderer, C. is a scholarly article available to read on EtoBox.

What is Skyrmion Lattice in a Doped Semiconductor about?

We report a comprehensive small angle neutron scattering study (SANS) of the magnetic phase diagram of the doped semiconductor Fe_{1-x}Co_{x}Si for x=0.2 and 0.25. For magnetic field parallel to the neutron beam we observe a six-fold intensity pattern under field-cooling, which identifies the A-phase of Fe_{1-x}Co_{x}Si as a skyrmion lattice. The regime of the skyrmion lattice is highly hysteretic and extents over a wide temperature range, consistent with the site disorder of the Fe and Co atoms. Our study identifies Fe_{1-x}Co_{x}Si is a second material after MnSi in which a skyrmion lattice forms and establishes that skyrmion lattices may also occur in strongly doped semiconductors.

Author

Münzer, W.; Neubauer, A.; Mühlbauer, S.; Franz, C.; Adams, T.; Jonietz, F.; Georgii, R.; Böni, P.; Pedersen, B.; Schmidt, M.; Rosch, A.; Pfleiderer, C.

Published

2009

Language

EN