About this scholarly article

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - The accumulation channel driven bipolar transistor (ACBT): a new MOS-gated semiconductor power device by Thapar, N.; Baliga, B.J. is a scholarly article available to read on EtoBox.

Author

Thapar, N.; Baliga, B.J.

Publisher

IEEE

Published

1997

Language

EN