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About this Materials Science article
Multi-bit storage in reset process of Phase Change Access Memory (PRAM) by Yi Zhang; Jie Feng; Yin Zhang; Zufa Zhang; Yinyin Lin; Ting'ao Tang; Bingchu Cai; Bomy Chen is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Yi Zhang; Jie Feng; Yin Zhang; Zufa Zhang; Yinyin Lin; Ting'ao Tang; Bingchu Cai; Bomy Chen
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - VCH Verlag GmbH & CO. KGaA; Wiley (ISSN 1862-6254)
- Published
- 2007
- Language
- EN
- Field
- Materials Science (Physical Sciences)