About this scholarly article

A Ferroelectric Field Effect Device Using Thin Film SnO2and Gate Insulator BaTiO3 by K. Ito; H. Tsuchiya is a scholarly article available to read on EtoBox.

Author

K. Ito; H. Tsuchiya

Publisher

Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)

Published

1975