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Amorphous Thin-Film Power Devices by 236901 is a document available to read on EtoBox.
What is Amorphous Thin-Film Power Devices about?
The document discusses the development of next-generation power devices (PDs) using amorphous thin-film oxide semiconductors, which outperform traditional bulk single-crystal silicon devices. These new devices can be fabricated on flexible substrates at low temperatures, achieving low specific on-resistance and high breakdown voltage, thus enabling applications in compact electronics. The study highlights the potential of these devices to meet the demands of emerging technologies like IoT and wearable devic
- Author
- 236901
- Language
- EN