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Thin Film Removal Mechanisms in Ns-laser Processing of Photovoltaic Materials by J. Bovatsek; A. Tamhankar; R.S. Patel; N.M. Bulgakova; J. Bonse is a Engineering article available to read on EtoBox.

What is Thin Film Removal Mechanisms in Ns-laser Processing of Photovoltaic Materials about?

The removal of thin films widely used in photovoltaics (amorphous silicon, tin oxide, zinc oxide, aluminum, and molybdenum) is studied experimentally using multi-kHz Q-switched solid-state lasers at 532 nm and 1064 nm wavelengths. The processing ("scribing") is performed through the film-supporting glass plate at scribing speeds of the order of m/s. The dependence of the film removal threshold on the laser pulse duration (8 ns to 40 ns) is investigated and the results are complemented by a multi-layer thermal model used for numerical simulations of the laser-induced spatio-temporal temperature field within the samples. Possible film removal mechanisms are discussed upon consideration of optical, geometrical, thermal and mechanical properties of the layers.

Who reads Thin Film Removal Mechanisms in Ns-laser Processing of Photovoltaic Materials?

Author

J. Bovatsek; A. Tamhankar; R.S. Patel; N.M. Bulgakova; J. Bonse

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)