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About this Engineering article
Core Structure and Properties of Partial Dislocations in Silicon Carbide P-i-n Diodes by Ha, S.; Benamara, M.; Skowronski, M.; Lendenmann, H. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ha, S.; Benamara, M.; Skowronski, M.; Lendenmann, H.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)
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