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Nanoscale Friction of Partially Oxidized Silicon Nitride Thin Films by J. Filla; C. Aguzzoli; V. Sonda; M.C.M. Farias; G.V. Soares; I.J.R. Baumvol; C.A. Figueroa is a Engineering article available to read on EtoBox.

What is Nanoscale Friction of Partially Oxidized Silicon Nitride Thin Films about?

The nanoscale friction of partially oxidized silicon nitride thin films deposited by reactive magnetron sputtering was investigated. Post deposition thermal annealing in O 2 , trying to simulate the oxidation by atmospheric oxygen in working conditions, formed a partially oxidized layer at the surface with maximum thickness around 10 nm. Unidirectional sliding tests showed a decrease of the low-load friction coefficients of the sliding pair for the samples annealed in oxygen as compared to the non-annealed ones. The results are discussed on the lights of our extension of the crystal chemistry model, which establishes a relationship between ionic potential and friction coefficient.

Who reads Nanoscale Friction of Partially Oxidized Silicon Nitride Thin Films?

Author

J. Filla; C. Aguzzoli; V. Sonda; M.C.M. Farias; G.V. Soares; I.J.R. Baumvol; C.A. Figueroa

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)

Published

2011

Language

EN

Field

Engineering (Physical Sciences)