About this Materials Science article
The growth optimization and mechanism of N-polar GaN films with an in situ porous SiN x interlayer by Deng, Gaoqiang; Zhang, Yuantao; Huang, Zhen; Yan, Long; Li, Pengchong; Han, Xu; Yu, Ye; Chen, Liang; Zhao, Degang; Du, Guotong is a Materials Science article available to read on EtoBox.
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- Author
- Deng, Gaoqiang; Zhang, Yuantao; Huang, Zhen; Yan, Long; Li, Pengchong; Han, Xu; Yu, Ye; Chen, Liang; Zhao, Degang; Du, Guotong
- Publisher
- Royal Society of Chemistry; The Royal Society of Chemistry; Royal Society of Chemistry (RSC) (ISSN 1466-8033)
- Published
- 2017
- Field
- Materials Science (Physical Sciences)