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About this Materials Science article
Investigation of the Flatband Voltage (VFB) Shift of Al2O3 on N2 Plasma Treated Si Substrate by Kim, Hyungchul; Lee, Jaesang; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Kim, Hyungchul; Lee, Jaesang; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag
- Publisher
- American Scientific Publishers (ISSN 1533-4880)
- Published
- 2013
- Language
- EN
- Field
- Materials Science (Physical Sciences)
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