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Float zone growth and characterization of Ge1−xSix (x⩽10 at%) single crystals by T.A Campbell; M Schweizer; P Dold; A Cröll; K.W Benz is a Engineering article available to read on EtoBox.

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Ge 1@x Si x (xp10 at%) single crystals were grown with the float zone technique using a monoellipsoid mirror furnace. The feed rod consisted of pre-synthesized Ge 0.95 Si 0.05 polycrystalline material with an initial composition of pure germanium. Several boron-doped (1-2 Â 10 17 at cm @3 ) crystals were grown using /1 0 0S Ge seeds. Taking advantage of the pre-synthesized feed rods, a defined macrosegregation could be achieved in the grown crystals with a linear slope at the beginning (E0.5 at% mm @1 ) followed by a plateau region with a constant silicon distribution (Si concentration up to 10 at%, fluctuation rate: p70.3 at%). The etch pit density was in the range of 7 Â 10 3 -2 Â 10 4 cm @2 . Micrographs of the etched crystals show sharp changes in interface curvature at the crystal edges. These distortions of the interface morphology are a direct function of the Si concentration; they are considered to be caused by solutal Marangoni convection. Theoretical considerations show that the flow direction and strength vary significantly from a solutal Marangoni convection regime directly in front of the solid-liquid interface to a thermal Marangoni convection regime within the bulk m

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Author

T.A Campbell; M Schweizer; P Dold; A Cröll; K.W Benz

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2001

Language

EN

Field

Engineering (Physical Sciences)