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About this Engineering article
(Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures by Stesmans, A.; Nguyen, S.; Afanas'ev, V. V. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Stesmans, A.; Nguyen, S.; Afanas'ev, V. V.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)
- Published
- 2014
- Field
- Engineering (Physical Sciences)
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