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Characterization of AlGaN, Te‐doped GaN and Mg‐doped GaN grown by hydride vapor phase epitaxy by K. S. Jang; K. H. Kim; S. L. Hwang; H. S. Jeon; H. S. Ahn; M. Yang; W. J. Choi; S. W. Kim; Y. Honda; M. Yamaguchi; N. Sawaki; J. Yoo; S. M. Lee; M. Koike is a Engineering article available to read on EtoBox.

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## Abstract The Al~x~Ga~1–x~N, Te‐doped GaN and Mg‐doped GaN layers on GaN/Al~2~O~3~ substrates are grown by mixed‐source hydride vapor phase epitaxy (HVPE) method. The metallic Ga mixed with Al is used as group III source material to get the Al~x~Ga~1–x~N layers. The values of the compositions x of the Al~x~Ga~1–x~N layers characterized by X‐ray diffraction (XRD) measurements are 0.6% ∼ 80% at the various temperatures of the source zone. The metallic Ga mixed with Te (or Mg) is used as source material for n‐type (or p‐type) doping. The electron concentrations of the Te‐doped GaN layers are varied from 1.8 × 10^17^ to 8.3 × 10^18^/cm^3^. The hole concentrations of the Mg‐doped GaN layers are varied from 1.5 × 10^16^ to 3.2 × 10^16^/cm^3^. We find that the mixed‐source HVPE method is suitable to get a thick AlGaN layer with an arbitrary composition, a Te‐doped GaN layer with a high n‐type concentration and a Mg‐doped GaN layer with p‐type concentration. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

K. S. Jang; K. H. Kim; S. L. Hwang; H. S. Jeon; H. S. Ahn; M. Yang; W. J. Choi; S. W. Kim; Y. Honda; M. Yamaguchi; N. Sawaki; J. Yoo; S. M. Lee; M. Koike

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)