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Real-time stress/strain measurement during growth of Sr and SrO epilayer on H-terminated Si by H. Asaoka; Y. Machida; H. Yamamoto; K. Hojou; K. Saiki; A. Koma is a Engineering article available to read on EtoBox.

What is Real-time stress/strain measurement during growth of Sr and SrO epilayer on H-terminated Si about?

We use real-time measurement of substrate curvature and reflection high energy electron diffraction (RHEED) methods to observe the film stressystrain behavior during epitaxial growth of Sr metal films and their oxidation process. The film stress and the thickness of the strained layer are minimized by using hydrogen-terminated Si substrates. The use of hydrogen-terminated Si(111) enables the growth of stress-free Sr layers from a thickness of 1.05 nm, whereas the films directly deposited on Si(111) 7=7 shows the presence of a strained layer with a thickness of 3.16 nm. We also observed that the intrinsic stress in the films changes drastically from compressive to tensile during the oxidation process, resulting from the variation in lattice mismatch.

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Author

H. Asaoka; Y. Machida; H. Yamamoto; K. Hojou; K. Saiki; A. Koma

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2003

Language

EN

Field

Engineering (Physical Sciences)